半导体材料的电子和空穴质量

Material Electron Mass Hole Mass ALAs 0.1 ALSb 0.12 mdos=0.98 GaN 0.19 mdos=0.60 GaAs 0.067 m1h=0.082,mhh=0.45 GaP 0.82 mdos=0.60 GaSb 0.042 mdos=0.40 Ge ml=1.64,mt=0.082 m1h=0.044,mhh=0.28 InP 0.073 mdos=0.64 InAs 0.027 mdos=0.4 InSb 0.13 mdos=0.4 Si ml=0.98,mt=0.19 m1h=0.16,mhh=0.49