InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency

The P-p-n-N InGaAsP/InP ridge waveguide phase modulator has been fabricated and investigated at a wavelength of 1550nm. The phase modulation efficiency measured by the Fabry-Perot resonance method is as high as 34°/V-mm for TE mode. The QEO effect becomes dominant from -4V to -8V.