中子辐照单晶硅与激光退火制备SOI结构的研究
A semiconductor on semiinsulator (SOI) structure was obtained in which the insulator substrate is neutron-irradiated silicon, then annealed with CW Ar+ or Q switched Nd; YAG laser, semiconductor layer was obtained and the implanted impurities in it was activated. The experimental results proved it t
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