Fabrication and properties of high quality InGaN based LEDs with highly reflecti
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricate
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