InAs/InGaAs digital alloy strain compensated quantum well lasers
InAs/InGaAs digital alloy strain-compensated quantum well lasers have been grown on InP substrate by gas source molecular beam epitaxy. Multiple quantum wells composed of compressive InAs/In0.53Ga0.47As digital alloy triangular wells and tensile In0.43Ga0.57As barriers were used as the active region
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