Temperature dependent characteristics of 980 nm two dimensional bottom emitting

High power bottom-emitting In0.2Ga0.8As/GaAs 4*4 two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays, with high output power in the 980-nm wavelength regime are reported. At room temperature, the 16-element array with 200-micron aperture size of individual elements shows a continuo