Laser induced damage of high reflectors for Ti:sapphire laser system
A broadband (~176 nm, R>98%, 'lambda'0=800 nm) and high laser-induced damage threshold (LIDT=2.4J/cm2) TiO2/HfO2/SiO2 high reflector (HR) for Ti:sapphire chirped-pulse amplification (CPA) laser system is fabricated by the electron beam evaporation. The refractive index and extinction coefficient
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